Properties of cu-doped low resistive ZnSe films deposited two-sourced evaporation
نویسندگان
چکیده
in the . The Two-sourced evaporation technique is used to prepare hard ZnSe films by controlling the evaporation rates o Zn and Se at substrate temperature of 400 1C. The films are doped with Cu by immersion in the Cu(NO3)2 solution for different periods of time. The XRD has not shown a drastic change in the film structure while the ele resistivity of the deposited film dropped from 10O-cm to about 1.6O-cm for solution immersed films after treatment. Optical properties of deposited and doped films, such as film thickness, absorption coefficient and o band gap have been calculated from the normal transmission spectra in the range of 300–2200 nm. The optical results show a decrease of the transmission and an increase of the refractive index and a slight shift optical band gap. Chemical composition of the Cu is determined by using absorption of immersed films composition of Cu is also compared with the composition detected by electron microprobe analyzer (EMPA). r 2005 Elsevier Ltd. All rights reserved.
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